Figure 3
Figure 3. Distinct profiles of activation marker expression on memory CD27−IgG+ B cells of CGD patients. (A) Representative and (B) comparisons of mean fluorescence intensity (MFI) profiles of expression for activation markers CD80, TACI, and CD95 were obtained from PBMCs of 9 CGD patients. Only persons with very low frequencies of CD21lo B cells were included. Gating on CD20+/CD10− cells established the B-cell population, and expression of IgD, IgG, and CD27 was used to establish naive (IgD+CD27−), as well as IgG+ CD27− and CD27+ memory B cells. Horizontal bars represent medians.

Distinct profiles of activation marker expression on memory CD27IgG+ B cells of CGD patients. (A) Representative and (B) comparisons of mean fluorescence intensity (MFI) profiles of expression for activation markers CD80, TACI, and CD95 were obtained from PBMCs of 9 CGD patients. Only persons with very low frequencies of CD21lo B cells were included. Gating on CD20+/CD10 cells established the B-cell population, and expression of IgD, IgG, and CD27 was used to establish naive (IgD+CD27), as well as IgG+ CD27 and CD27+ memory B cells. Horizontal bars represent medians.

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